sot-23 plastic-encapsulate transistors s9018 transistor (npn) features z am/fm amplifier, local o scillator of fm/vhf tuner z high current gain bandwidth product marking j8 maximum ratings (t a =25 unless otherwise noted) symbol para m eter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 15 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test co n ditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 15 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =12v, i e =0 0.05 a collector cut-off current i ceo v ce =12v, i b =0 0.1 a emitter cut-off current i ebo v eb = 3v, i c =0 0.1 a dc current gain h fe(1) v ce =5v, i c = 1ma 70 190 collector-emitter saturation voltage v ce (sat) i c =10ma, i b = 1ma 0.5 v base-emitter saturation voltage v be (sat) i c =10ma, i b = 1ma 1.4 v transition frequency f t v ce =5v, i c = 5ma f= 400mhz 8 0 0 mhz classification of h fe rank l h range 70-105 105-190 so t -23 1. base 2. emitter 3. collector 5 - $ thermal resistance from junction to ambient 625 /w 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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